Enhanced High Frequency Response of Long Ge-on-Si Waveguide PIN Photodetectors Under Deep Saturation

Broadband frequency responses of silicon photonic photodetectors are experimentally investigated under linear and saturated conditions. It is shown that long photodetectors could have better high frequency outputs beyond the traditional 3-dB bandwidth under pulse excitation. © 2024 The Author(s)

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Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676691
Primary Topic
Photonic and Optical Devices
Type
article
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article

Enhanced High Frequency Response of Long Ge-on-Si Waveguide PIN Photodetectors Under Deep Saturation

Zheng Zheng, Xinxuan Ma, Xin Zhao, Siyi Jiang et al.
Photonic and Optical Devices
article

Enhanced High Frequency Response of Long Ge-on-Si Waveguide PIN Photodetectors Under Deep Saturation

Zheng Zheng, Xinxuan Ma, Xin Zhao, Siyi Jiang, Yuhang Wan, Yaxuan Zheng
article en

Abstract

Broadband frequency responses of silicon photonic photodetectors are experimentally investigated under linear and saturated conditions. It is shown that long photodetectors could have better high frequency outputs beyond the traditional 3-dB bandwidth under pulse excitation. © 2024 The Author(s)

Beihang University (CN)
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