Study of Lateral Mesa Scaling and Contact Width of Light-Emitting Transistors with FEM Simulation

This study uses numerical simulations to analyse the QW-HBLET's performance with different mesa sizes and contact widths. The theoretical framework used is the Schrödinger-Poisson Equation and the Drift-Diffusion Equation. The study found that the nodal current is proportional to the emitter area, and the current gain remains unaffected by changes in the emitter area. Moreover, larger contact widths result in higher DC current gain and cut-off frequency under certain conditions.