Green Resonant-Cavity Light-Emitting Diodes Based on a GaN-on-Si Wafer
Based on a GaN-on-Si wafer (GaN epitaxy grown on a silicon substrate), green resonant-cavity light-emitting diodes were fabricated and characterized. Multiple resonant-cavity modes with a mode spacing of approximately 16 nm and a full-width at half-maximum of approximately 9 nm were observed.
Authors
- Yu-Hsiang Kao
- Pinghui S. Yeh (ORCID: https://orcid.org/0000-0002-8443-2374)
- Sheng‐Lung Huang (ORCID: https://orcid.org/0000-0001-6244-1555)
- Jung‐Chieh Su
- Yu-Liang Hsiao
- M.F. Li (ORCID: https://orcid.org/0000-0001-5797-9174)
- Che‐Chia Chang
Institutions
- National Taiwan University of Science and Technology (TW)
- National Taiwan University (TW)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676826
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00