4H-SiC Radiation Hardened Static Random Access Memory
4H-SiC static random-access memory (SRAM) was suggested and demonstrated for extreme-environment applications. The 4H-SiC SRAMs show the proper memory states with high static noise margins (SNMs). After exposure to a significant gamma-ray radiation of 810 kGy, the SRAMs continued to function effectively, maintaining positive SNM values necessary for proper memory operation. After the gamma-ray radiation, the SRAM operation was tested at high temperature, and it continued to function normally even at temperatures as high as 500°C.
Authors
- Akinori Takeyama (ORCID: https://orcid.org/0000-0002-7546-3646)
- Takeshi Ohshima (ORCID: https://orcid.org/0000-0002-7850-3164)
- Kazutoshi Kojima (ORCID: https://orcid.org/0000-0002-6797-0461)
- Shin-Ichiro Kuroki (ORCID: https://orcid.org/0000-0002-0539-9941)
- Yasunori Tanaka (ORCID: https://orcid.org/0000-0002-7986-608X)
- Taisei Ozaki
- Toya Kai
Institutions
- Hiroshima University (JP)
- National Institutes for Quantum Science and Technology (JP)
- National Institute of Advanced Industrial Science and Technology (JP)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-09-23
- DOI
- https://doi.org/10.1109/led.2024.3466612
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Japan Society for the Promotion of Science