High Sensitivity Temperature Measurements to Track and Compensate Aging Effects on CMOS Amplifiers

This article presents a method to monitor and compensate gain degradation produced by aging in linear CMOS amplifiers. The proposed procedure relies on a stand-alone temperature sensor circuit. DC measurements at the output of the temperature sensor allow to monitor high-frequency gain, and to select an adaptive biasing to keep a constant gain along the circuit lifetime. The approach is validated experimentally on a high-frequency Power Amplifier, which was subjected to an accelerated aging degradation. Experimental results demonstrate the capability to keep the amplifier gain within 0.3 dB from its fresh value, even after important device aging degradation.

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Publication Details

Journal
IEEE Transactions on Device and Materials Reliability
Published
2024-09-23
DOI
https://doi.org/10.1109/tdmr.2024.3465236
Citations
1
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.21

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article

High Sensitivity Temperature Measurements to Track and Compensate Aging Effects on CMOS Amplifiers

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IEEE Transactions on Device and Materials Reliability
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article

High Sensitivity Temperature Measurements to Track and Compensate Aging Effects on CMOS Amplifiers

D. Mateo, Josep Altet, Enrique Barajas, Xavier Marcet i Gisbert, X. Aragonés, S. Martı́nez
article en
1 citations

Abstract

This article presents a method to monitor and compensate gain degradation produced by aging in linear CMOS amplifiers. The proposed procedure relies on a stand-alone temperature sensor circuit. DC measurements at the output of the temperature sensor allow to monitor high-frequency gain, and to select an adaptive biasing to keep a constant gain along the circuit lifetime. The approach is validated experimentally on a high-frequency Power Amplifier, which was subjected to an accelerated aging degradation. Experimental results demonstrate the capability to keep the amplifier gain within 0.3 dB from its fresh value, even after important device aging degradation.

IEEE Transactions on Device and Materials ReliabilityVol. 25(1)
Universitat Politècnica de Catalunya (ES)
Agencia Estatal de Investigación
Affordable and clean energy
Openalex Percentile: Top 48%
Advancements in Semiconductor Devices and Circuit Design
0.21
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