PT Symmetry Breaking Induced Anomalous Valley Hall Effect in 2D Antiferromagnetic Semiconductor

Realizing the anomalous valley Hall (AVH) effect in two-dimensional (2D) materials is of crucial importance for information processing and recording technology. While the research in this field mainly focuses on ferromagnetic systems, little is known about antiferromagnetic systems. Here, using <b>k·p</b> model analysis, we report a novel mechanism of realizing the AVH effect in 2D antiferromagnetic materials. This physics is related to the PT symmetry breaking induced by intrinsic staggered sublattice potential, which is introduced by asymmetric magnetic ions located at different sublattices. With reversal of the magnetic orientation on different sublattices, the AVH effect can be reversed. Based on first-principles calculations, we further demonstrate this mechanism in an antiferromagnetic monolayer of NiRuCl₆. Intriguingly, due to the d orbital mismatch near the Fermi level, monolayer NiRuCl₆ simultaneously owns zero net magnetization and large spin splitting and valley polarizations, which facilitates the observation of the AVH effect. Our findings greatly enrich the research on valley physics in antiferromagnetic systems.