Experimental investigation on in-situ laser-assisted machining of single crystal silicon based on response surface methodology

Abstract In this paper, Response Surface Methodology (RSM) was utilized as a robust and convenient predictive tool to establish the correlation between process parameters in in situ laser-assisted machining and the surface roughness of single-crystal silicon. An optimized design of the diamond tool, a novel temperature field analysis method, and Response Surface Methodology (RSM) were utilized. The contribution rate of each process parameter on surface roughness was laser power > rotation speed > cutting depth > feed rate. The optimal process parameter combination is: rotation speed as 1001 r min −1 , feed rate as 4.9 μm/r, cutting depth as 7.55 μm, and laser power as 28.81 W. Experimental validation of these optimal parameters compared surface roughness values obtained experimentally with those predicted. The surface roughness model showed a maximum relative error of 5.2%, with an average error of 4.8% across three experimental sets. These errors are within acceptable limits, indicating an alignment between predicted and experimental results.