Numerical simulations of novel multi- chalcogenide CuAgBeSnSe₄ based thin film solar cell with over 24% efficiency using SCAPS-1D

Abstract For solar cell applications, the multi-chalcogenide CuAgBeSnSe 4 (CABTSe) shows promise as a potential absorbing material. In this study, numerical simulations were conducted for the ITO/CABTSe/Ag 2 S/Au structure, which was screened from a group of 50 CABTSe-based thin film solar cells (TFSCs) using the SCAPS-1D code. We explored the influence of various parameters such as thickness, doping concentration, defect density, mobility, and electron affinity on the photovoltaic performance of the screened device. Under optimized parameters, the open circuit voltage, short circuit current, filling factor, and efficiency of the photovoltaic device were 1.099 V, 25.5 mA cm −2 , 86.48%, and 24.24%, respectively. This study provides an effective approach for using CABTSe-based TFSCs as a replacement for traditional Cu 2 ZnSn(S,Se) 4 -based TFSCs.