Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells

This study comprehensively details the successful synthesis of a β-Ga2O3/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and high-temperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga2O3 and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga2O3 and the increased surface area provided by the porous GaAs.

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Publication Details

Journal
Physics and Chemistry of Solid State
Published
2024-09-15
DOI
https://doi.org/10.15330/pcss.25.3.546-552
Citations
5
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.59

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Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells

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article

Synthesis and Characterization of β-Ga2O3/por-GaAs/mono-GaAs Heterostructures for Enhanced Portable Solar Cells

Ihor Bohdanov, Ivan Kosogov, Zhakyp T. Karipbayev, Yana Suchikova, Anatoli I. Popov, Dariya Drozhcha, Serhii Kovachov
article en
5 citations

Abstract

This study comprehensively details the successful synthesis of a β-Ga2O3/por-GaAs/mono-GaAs heterostructure designed for portable solar cells. Employing a combination of electrochemical etching and high-temperature oxygen annealing, we engineered a heterostructure that exhibits both crystalline and amorphous phases. XRD, SEM, and Raman spectroscopy analyses confirmed the formation of crystalline β-Ga2O3 and GaAs, with the porosity in the GaAs layer enhancing light absorption and charge collection. The potential of the heterostructure to improve photovoltaic performance is attributed to the inherent stability of Ga2O3 and the increased surface area provided by the porous GaAs.

Physics and Chemistry of Solid StateVol. 25(3)
L. N. Gumilyov Eurasian National University (KZ), Berdyansk State Pedagogical University (UA), University of Latvia (LV)
National Research Foundation of Ukraine, National Research Foundation, Latvijas Universitate
Openalex Percentile: Top 40%
Ga2O3 and related materials
0.59
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