Hard Copper Boride with Exceptional Conductivity

Copper and boron seldom engage in reaction at ambient pressure. The few reports on copper-doped boron compounds that exist in the literature often lack definitive stoichiometry. Here, we report successful synthesis of Cu_{2-δ}B_{25} single crystals (δ∼0.03, indicating Cu understoichiometry) via a high-pressure melting method using copper and β-rhombohedral boron as precursors. Crystals thus synthesized are characterized by a tetragonal boron sublattice, within which Cu atoms are either partially or fully situated at different interstices between B_{12} icosahedra. The crystals possess a high Vickers hardness of 26.5 GPa and an unusually high electrical conductivity of 1.19×10^{5} S/m-the highest conductivity among the icosahedron-based borides. Hall measurements reveal a notable p-n conduction type transition around 30 GPa. This transition, alongside the remarkable conductivity, is potentially modulated by the copper content and its valence states within the structure. The synthesis of Cu_{2-δ}B_{25} not only broadens the spectrum of hard materials but also opens new avenues for innovative modulation of electronic properties in boron-rich compounds, with promising technological implications.

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Publication Details

Journal
Physical Review Letters
Published
2024-09-23
DOI
https://doi.org/10.1103/physrevlett.133.136301
Citations
11
Primary Topic
Boron and Carbon Nanomaterials Research
Type
article
Field-Weighted Citation Impact
1.29

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article

Hard Copper Boride with Exceptional Conductivity

Xiang‐Feng Zhou, Yongjun Tian, Wentao Hu, Zhisheng Zhao et al.
11 citations
Physical Review Letters
Boron and Carbon Nanomaterials Research
1.29
article

Hard Copper Boride with Exceptional Conductivity

Xiang‐Feng Zhou, Yongjun Tian, Wentao Hu, Zhisheng Zhao, Yufei Gao, Changzeng Fan, Xiao‐Ji Weng, Zhongyuan Liu, Dongzhou Zhang, Jingyu Hou, Xiang Zhang, Bo Xu, Yanbin Wang, Xi Shao, Guochun Yang, Ming-Xing Huang, Lin Wang
article en
11 citations

Abstract

Copper and boron seldom engage in reaction at ambient pressure. The few reports on copper-doped boron compounds that exist in the literature often lack definitive stoichiometry. Here, we report successful synthesis of Cu_{2-δ}B_{25} single crystals (δ∼0.03, indicating Cu understoichiometry) via a high-pressure melting method using copper and β-rhombohedral boron as precursors. Crystals thus synthesized are characterized by a tetragonal boron sublattice, within which Cu atoms are either partially or fully situated at different interstices between B_{12} icosahedra. The crystals possess a high Vickers hardness of 26.5 GPa and an unusually high electrical conductivity of 1.19×10^{5} S/m-the highest conductivity among the icosahedron-based borides. Hall measurements reveal a notable p-n conduction type transition around 30 GPa. This transition, alongside the remarkable conductivity, is potentially modulated by the copper content and its valence states within the structure. The synthesis of Cu_{2-δ}B_{25} not only broadens the spectrum of hard materials but also opens new avenues for innovative modulation of electronic properties in boron-rich compounds, with promising technological implications.

Physical Review LettersVol. 133(13)
Nankai University (CN), Yanshan University (CN), University of Chicago (US)
National Science Foundation, U.S. Department of Energy, University of Chicago, National Natural Science Foundation of China, Natural Science Foundation of Hebei Province, National Key Research and Development Program of China, Argonne National Laboratory
Openalex Percentile: Top 16%
Boron and Carbon Nanomaterials Research
1.29
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