Photoelectrochemical behavior of GaTe nanoflakes prepared by exfoliation

Gallium telluride (GaTe), a layered semiconductor, was investigated in the photoelectrochemical (PEC) hydrogen evolution reaction (HER). GaTe nanoflakes were prepared by both mechanical and liquid phase exfoliations, and were subsequently used to obtain micro-, and macroelectrodes. When studying them as photocathodes, the highest photocurrent density of ∼6 mA cm −2 was achieved with a 808±50 nm thick flake. Importantly, the GaTe microelectrodes presented a thickness dependent PEC activity. Macroscopic (1 cm 2 ) GaTe electrodes were also prepared from the liquid phase exfoliated nanoflakes, by immobilizing them on glassy carbon electrodes. GaTe photocathodes showed loading and solar power flux dependent PEC activity and reaching a maximum photocurrent of ∼4 mA cm –2 with a good photostability. Overall, these results add another candidate to the pool of photoelectrodes applicable in different PEC processes.