WSe₂/n-GaN and WSe₂/p-GaN heterojunction band alignment

Abstract In this work, we measured the band alignment of 2D/3D heterostructures of WSe 2 on n-doped, p-doped, and intrinsic GaN by x-ray photoelectron spectroscopy. The WSe 2 /n-GaN heterojunction exhibits type-II band alignment, with measured valence band offset (VBO) and conduction band offset (CBO) values of 2.28 ± 0.15 eV and 0.96 ± 0.15 eV, respectively. On the other hand, the WSe 2 /p-GaN heterojunction shows type-I band alignment, with measured VBO and CBO values of 0.1 ± 0.15 eV and 1.22 ± 0.15 eV, respectively. The results show that doping has a significant effect on the arrangement of the energy bands of the heterostructure, and provides a reference for device applications based on heterojunctions.