A Trim-Free PVT Invariant Current Reference with 0.48% Process Inaccuracy Using V<sub>TH</sub> Tracking Approach

The prevalence of MOSFETs in diverse electronic applications highlights their significance. However, the sensitivity of MOSFET threshold voltage to process variation poses a substantial challenge in achieving consistent device performance. This paper proposes a novel approach to overcome this challenge by employing a threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{TH})$</tex> tracking circuit that tracks the variation in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{TH}$</tex>. Our primary objective is to develop a current reference that remains invariant across process, voltage, and temperature (PVT) variations, eliminating the need for an external trimming circuit. This is achieved by the meticulous integration of V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> tracking circuit, CTAT generator, PTAT generator, and a current adder. By employing this design, a process variation <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\frac{\sigma}{\mu})$</tex> of 0.48%, a temperature coefficient (TC) of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${210}{ppm}/^{\circ} {C}$</tex> ‘ for a temperature range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-{40}/^{\circ} {C}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${120}^{\circ} {C}$</tex>, and a line sensitivity of 1.6% is achieved over a voltage range of 1.6V - 3V. The proposed circuit occupies an area of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${0.013}{mm}^{{2}}$</tex>: while consuming power of 56μW at a typical corner of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${27}^{\circ}{C}$</tex> and a supply of 1.8V. The given circuit is implemented in a 180nm CMOS process node with a generated reference current of 61nA.

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Published
2024-08-11
DOI
https://doi.org/10.1109/mwscas60917.2024.10658710
Primary Topic
Analog and Mixed-Signal Circuit Design
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article
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article

A Trim-Free PVT Invariant Current Reference with 0.48% Process Inaccuracy Using VTH Tracking Approach

Khanh M Le, Zia Abbas, Chetan Mittal, Vishnu Kuncham et al.
Analog and Mixed-Signal Circuit Design
article

A Trim-Free PVT Invariant Current Reference with 0.48% Process Inaccuracy Using VTH Tracking Approach

Khanh M Le, Zia Abbas, Chetan Mittal, Vishnu Kuncham, Aniketh Atmakuri, Jalluri Ram Gopal, V.S.S. Pradhith
article en

Abstract

The prevalence of MOSFETs in diverse electronic applications highlights their significance. However, the sensitivity of MOSFET threshold voltage to process variation poses a substantial challenge in achieving consistent device performance. This paper proposes a novel approach to overcome this challenge by employing a threshold voltage <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(V_{TH})$</tex> tracking circuit that tracks the variation in <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$V_{TH}$</tex>. Our primary objective is to develop a current reference that remains invariant across process, voltage, and temperature (PVT) variations, eliminating the need for an external trimming circuit. This is achieved by the meticulous integration of V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> tracking circuit, CTAT generator, PTAT generator, and a current adder. By employing this design, a process variation <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\frac{\sigma}{\mu})$</tex> of 0.48%, a temperature coefficient (TC) of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${210}{ppm}/^{\circ} {C}$</tex> ‘ for a temperature range of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$-{40}/^{\circ} {C}$</tex> to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${120}^{\circ} {C}$</tex>, and a line sensitivity of 1.6% is achieved over a voltage range of 1.6V - 3V. The proposed circuit occupies an area of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${0.013}{mm}^{{2}}$</tex>: while consuming power of 56μW at a typical corner of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">${27}^{\circ}{C}$</tex> and a supply of 1.8V. The given circuit is implemented in a 180nm CMOS process node with a generated reference current of 61nA.

Vol. 2
Analog Devices (United States) (US), International Institute of Information Technology, Hyderabad (IN)
Openalex Percentile: Top 86%
Analog and Mixed-Signal Circuit Design
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