Synergistic damage behavior of He ion irradiation and molten salt corrosion in SiC at 750 °C

CVD SiC samples exposed to 400 keV He ion irradiation at 750 °C were subsequently corroded in FLiNaK molten salt at 750 °C for 166 h. After corrosion, the dissolution of Si led to the formation of a carbon-rich layer and obvious denudation of the SiC. The microstructure of the C-rich layer was first visualized and characterized via TEM, confirming that a graphitic structure was present inside the layer. Furthermore, the AFM images indicate that the denudation depth increases with increasing irradiation dose. Moreover, the Ni impurities in the salt play a key role in the irradiation-promoted corrosion of SiC. These findings suggest that Ni can preferentially react with irradiation-included homonuclear Si‒Si bonds to promote SiC corrosion. Moreover, the number density of He bubbles decreases as their size increases near or within the C-rich layer, and it is speculated that the vacancies created by the loss of Si result in the migration and coalescence of He bubbles. In conclusion, irradiation and corrosion at high temperatures induced synergistic damage behavior in SiC.

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Publication Details

Journal
Journal of Advanced Ceramics
Published
2024-09-23
DOI
https://doi.org/10.26599/jac.2024.9220975
Citations
7
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46
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article

Synergistic damage behavior of He ion irradiation and molten salt corrosion in SiC at 750 °C

Jun Lin, Tang Ya, Jinlei Yang, Qiantao Lei et al.
7 citations
Journal of Advanced Ceramics
Semiconductor materials and devices
1.46
article

Synergistic damage behavior of He ion irradiation and molten salt corrosion in SiC at 750 °C

Jun Lin, Tang Ya, Jinlei Yang, Qiantao Lei, Lin Zhao, Jianjian Li, Jianfeng Zhang
article en
7 citations

Abstract

CVD SiC samples exposed to 400 keV He ion irradiation at 750 °C were subsequently corroded in FLiNaK molten salt at 750 °C for 166 h. After corrosion, the dissolution of Si led to the formation of a carbon-rich layer and obvious denudation of the SiC. The microstructure of the C-rich layer was first visualized and characterized via TEM, confirming that a graphitic structure was present inside the layer. Furthermore, the AFM images indicate that the denudation depth increases with increasing irradiation dose. Moreover, the Ni impurities in the salt play a key role in the irradiation-promoted corrosion of SiC. These findings suggest that Ni can preferentially react with irradiation-included homonuclear Si‒Si bonds to promote SiC corrosion. Moreover, the number density of He bubbles decreases as their size increases near or within the C-rich layer, and it is speculated that the vacancies created by the loss of Si result in the migration and coalescence of He bubbles. In conclusion, irradiation and corrosion at high temperatures induced synergistic damage behavior in SiC.

Journal of Advanced CeramicsVol. 13(11)
Shanghai Institute of Applied Physics (CN), Communication University of China (CN)
Openalex Percentile: Top 18%
Semiconductor materials and devices
1.46
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