Interfacing GaN HEMTs with Josephson Junctions: A Novel Approach to High-Frequency Electronics

This paper explores the potential of interfacing a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with Josephson Junction technology at cryogenic temperatures to achieve high-frequency signal generation. A high frequency GaN transistor is developed and modeled using Synopsys, and integrated into a cascade amplifier using Y-Parameters extracted from the Synopsys toolkit. A voltage amplification is demon-strated as high as 1.2THz, and power amplification up to 390GHz. The development of high frequency generation and amplification methods has applications in next generation telecommunications and scientific research such as photonics.