A 24-28.5GHz Compact GaN/SiC MMIC Power Amplifier with 39% Peak PAE Supporting 5G 400MHz Down-Link Signal
This paper presents the design and experimental characterization of a compact two-stage monolithic microwave integrated circuit (MMIC) power amplifier (PA) implemented in a 150nm GaN/SiC high electron mobility (HEMT) technology. The proposed P A achieves 31.2-31.9 dBm of saturated output power (P<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</inf>), 36.7-39.20/0 peak PAE and a small-signal gain of 18.6-20.5dB across the n258 (24.25-27.5GHz) band, under CW excitation. The PA exhibits high linearity under 100/400MHz 5G QPSK downlink signals and achieves -24.5/-25.1dBc ACLR, 24.8/24.5dB EVM, for an average Pout of 24.2/20dBm and PAE of 22.1/110%, at 26GHz without digital pre-distortion (DPD). Its compact size (2mm2) and high performance advance the state-of-the-art (SOTA) for GaN MMIC PAs operating in the 5G n258 (24.25-27.5GHz) frequency band.
Authors
- Alexandre Giry (ORCID: https://orcid.org/0000-0002-0140-3288)
- Dominique Morche (ORCID: https://orcid.org/0000-0002-5762-4135)
- Pascal Reynier
- Ayssar Serhan (ORCID: https://orcid.org/0000-0003-0211-3423)
- Mohammad Moussa
Institutions
- Institut polytechnique de Grenoble (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
Publication Details
- Published
- 2024-08-11
- DOI
- https://doi.org/10.1109/mwscas60917.2024.10658820
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.31