IGBT based Solid-state PETC for HVDC Transformer

In this paper, a novel approach is presented to HVDC tap changers using power electronics technology. The traditional tap changer, typically based on mechanical mechanisms, is prone to wear and tear, and it can result in limited control precision. This is compensated by using IGBT as the power electronic switch for the tap changer. The proposed Power Electronic Tap Changer (PETC) offers several advantages over conventional solutions, including faster response times, precise control, reduced maintenance requirements, and improved reliability. The PETC leverages high-power semiconductor devices, such as insulated gate bipolar transistors (IGBTs), and advanced control algorithms to efficiently adjust the transformer's turn’s ratio. It provides the ability to dynamically adapt to varying load conditions, ensuring optimal performance and power quality in the HVDC system.

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Publication Details

Published
2024-08-08
DOI
https://doi.org/10.1109/iccpct61902.2024.10673144
Primary Topic
High voltage insulation and dielectric phenomena
Type
article
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IGBT based Solid-state PETC for HVDC Transformer

Tomson Thomas, Anoopraj M.R, Alen Joshy, Alby Rajan et al.
High voltage insulation and dielectric phenomena
article

IGBT based Solid-state PETC for HVDC Transformer

Tomson Thomas, Anoopraj M.R, Alen Joshy, Alby Rajan, Meenakshi S Nair, Silja Merin Saji
article en

Abstract

In this paper, a novel approach is presented to HVDC tap changers using power electronics technology. The traditional tap changer, typically based on mechanical mechanisms, is prone to wear and tear, and it can result in limited control precision. This is compensated by using IGBT as the power electronic switch for the tap changer. The proposed Power Electronic Tap Changer (PETC) offers several advantages over conventional solutions, including faster response times, precise control, reduced maintenance requirements, and improved reliability. The PETC leverages high-power semiconductor devices, such as insulated gate bipolar transistors (IGBTs), and advanced control algorithms to efficiently adjust the transformer's turn’s ratio. It provides the ability to dynamically adapt to varying load conditions, ensuring optimal performance and power quality in the HVDC system.

Government Medical College (IN)
Affordable and clean energy
Openalex Percentile: Top 90%
High voltage insulation and dielectric phenomena
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