Fabrication of submicron CoFeB/MgO/CoFeB magnetic tunnel junction using a resistive mask HSQ/PMMA

The technology of manufacturing magnetic tunnel junctions based on CoFeB/MgO/CoFeB layers with characteristic lateral dimensions from 200 to 700 nm using a combination of HSQ/PMMA electronic resistors has been developed. To study the processes of magnetization reversal in the obtained samples, measurements of magnetoresistance curves were carried out. It is shown that, depending on the structure of the magnetically sensitive layer and the geometric parameters of the TMR contacts, elements with both vortex and quasi-homogeneous distribution of the magnetization of the free layer are realized. At the same time, in the latter, the width of the magnetization reversal front is from 2 to 6 Oe.