Contact potential difference in the absence of current through the sample in the quantum hall effect regime in InGaAs/InAlAs heterostructure

The paper presents experimental results of the appearance of voltage at potential contacts in the absence of an external current through the sample in the plateau region of the quantum Hall effect in a heterostructure with an InGaAs/InAlAs quantum well. The occurrence of voltage is associated with the non-equivalence of edge current in potential contact areas in a magnetic field in a system with a two-dimensional electron gas.