Computational survey of optoelectronic properties and half-metallicity in ZnFeMnS: insight from first principles calculations

The electronic structure, optic and magnetic properties of the ZnFeMnS quaternary compound are studied on the basis of band-structure calculations, using full-potential linearized augmented plane wave (FPLAPW) method. The calculations are performed within the generalized gradient approximation (GGA). The calculated results indicate that ternary ZnMnS has an insulating character for the two directions of spin so, in its current form, it is inappropriate for spintronics devices. In contrary, Fe/Mn codoped ZnS is a half-metallic (HM) ferromagnet with a magnetic moment of 9 μB per formula unit. The integer magnetic moment of this compound indicates the stability of its half-metallic behavior. Consequently ZnFeMnS could be a promising dilute magnetic semiconductor for application in spintronic devices. Moreover, we have computed optical properties (absorption coefficient and reflectivity) of the two compounds, and have found a pronounced peak occurring at low energies for ZnFeMnS in all the optical curves due to transition metal (TM) impurity. The improvement of optical properties allows this compound to be used in manufacturing photovoltaic static converter or in display devices.

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Publication Details

Journal
STUDIES IN ENGINEERING AND EXACT SCIENCES
Published
2024-09-20
DOI
https://doi.org/10.54021/seesv5n2-237
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Computational survey of optoelectronic properties and half-metallicity in ZnFeMnS: insight from first principles calculations

W. Benstaali, A. Abbad, N.N.A. Saidi, Kheira Bahnes et al.
STUDIES IN ENGINEERING AND EXACT SCIENCES
Chalcogenide Semiconductor Thin Films
article

Computational survey of optoelectronic properties and half-metallicity in ZnFeMnS: insight from first principles calculations

W. Benstaali, A. Abbad, N.N.A. Saidi, Kheira Bahnes, Mansour Bardadi Bendaha, Saliha Rezini
article en

Abstract

The electronic structure, optic and magnetic properties of the ZnFeMnS quaternary compound are studied on the basis of band-structure calculations, using full-potential linearized augmented plane wave (FPLAPW) method. The calculations are performed within the generalized gradient approximation (GGA). The calculated results indicate that ternary ZnMnS has an insulating character for the two directions of spin so, in its current form, it is inappropriate for spintronics devices. In contrary, Fe/Mn codoped ZnS is a half-metallic (HM) ferromagnet with a magnetic moment of 9 μB per formula unit. The integer magnetic moment of this compound indicates the stability of its half-metallic behavior. Consequently ZnFeMnS could be a promising dilute magnetic semiconductor for application in spintronic devices. Moreover, we have computed optical properties (absorption coefficient and reflectivity) of the two compounds, and have found a pronounced peak occurring at low energies for ZnFeMnS in all the optical curves due to transition metal (TM) impurity. The improvement of optical properties allows this compound to be used in manufacturing photovoltaic static converter or in display devices.

STUDIES IN ENGINEERING AND EXACT SCIENCESVol. 5(2)
Affordable and clean energy
Openalex Percentile: Top 87%
Chalcogenide Semiconductor Thin Films
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