2D & 3D simulation of a diamond Junction Field Effect Transistor and comparison with experiments

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SPIRE - Sciences Po Institutional REpository
Published
2024-09-01
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
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article
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article

2D & 3D simulation of a diamond Junction Field Effect Transistor and comparison with experiments

Julien Pernot, Ralph Makhoul, Damien Michez, Nicolas Rouger et al.
SPIRE - Sciences Po Institutional REpository
Advancements in Semiconductor Devices and Circuit Design
article

2D & 3D simulation of a diamond Junction Field Effect Transistor and comparison with experiments

Julien Pernot, Ralph Makhoul, Damien Michez, Nicolas Rouger, Juliette Letellier
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Laboratoire Plasma et Conversion d'Energie (FR), Institut Néel (FR), Diafir (France) (FR), Laboratoire de Génie Électrique de Grenoble (FR)
Affordable and clean energy
Openalex Percentile: Top 87%
Advancements in Semiconductor Devices and Circuit Design
OpenAlex
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2D & 3D simulation of a diamond Junction Field Effect Transistor and comparison with experiments — Julien Pernot, Ralph Makhoul, et al. · SPIRE - Sciences Po Institutional REpository (2024) | TGRS Research Map | TGRS