Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μ m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1 0 16 1 MeV n eq cm −2 . Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55 Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.

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Publication Details

Journal
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Published
2024-09-21
DOI
https://doi.org/10.1016/j.nima.2024.169896
Citations
24
Primary Topic
Particle Detector Development and Performance
Type
article
Field-Weighted Citation Impact
15.83

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article

Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

L. Lautner, J. Glover, W. Snoeys, A. Dubla et al.
24 citations
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment
Particle Detector Development and Performance
15.83
article

Characterization of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

L. Lautner, J. Glover, W. Snoeys, A. Dubla, Artem Kotliarov, Judith Schlaadt, G. L. Usaı́, A. Macchiolo, Adriana Simancas, A. Sturniolo, A. Trifirò, Mihail Bogdan Blidaru, László Z. Varga, Manuel Del Rio Viera, S. Kushpil, Gianpiero Vignola, M. Keil, Karoliina Rebane, Simon Spannagel, Roberto Baccomi, Kunal Gautam, G. Scioli, D. Dannheim, R. C. Lemmon, M. Šuljić, P. La Rocca, L. Gonella, David Schledewitz, S. Mattiazzo, G. Aglieri Rinella, Finn Feindt, C. Kobdaj, Lennart Huth, Sara Ruiz Daza, Natthawut Laojamnongwong, M. Rasa, M. Colocci, F. Piro, F. Křížek, M. Mager, J. Egger, F. Carnesecchi, C. Lemoine, P. Camerini, Long Li, J. Witte, T. Vaňát, S. Masciocchi, Kritsada Kittimanapun, H. Hillemanns, M. Antonelli, F. Reidt, M. Chartier, N. Tiltmann, D. De Gruttola, D. M. Jones, A. Villani, G. Contin, L. Fabbietti, Antonello di Mauro, F. Librizzi, Marius Wilm Menzel, Jacob Bastiaan van Beelen, A. Mulliri, G. Alocco, I. Sanna, A. Rachevski, S. Beolè, Maurice Calvin Donner, Karl Gran Grodaas, Mia Rose Mylne, Bent Benedikt Buttwill, M. Verdoglia, Rebekka Bettina Wittwer, Jiyoung Kim, J. Liu, Yongjun Choi, А. Исаков, S. Senyukov, G. H. Eberwein, Antoine Junique, A. Ilg, Valerio Sarritzu, Paolo Martinengo, Jetnipit Kaewjai, R. Ricci, Ingrid-Maria Gregor, Alexander Musta, E. Buschmann, Roman Gernhaeuser, Haakan Wennloef, G. Saccà, Gabriela Kucharska, D. Marras, Alex Kluge
article en
24 citations

Abstract

Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterize and qualify this process and to optimize the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: doping levels, pixel geometries and pixel pitches (10–25 μ m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and 1 0 16 1 MeV n eq cm −2 . Here the results from prototypes that feature direct analogue output of a 4 × 4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using 55 Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimizations.

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated EquipmentVol. 1069
University of Salerno (IT), University of Bonn (DE), University of Trieste (IT), University of Liverpool (GB), GSI Helmholtz Centre for Heavy Ion Research (DE), University of Cagliari (IT), Heidelberg University (DE), Deutsches Elektronen-Synchrotron DESY (DE), Istituto Nazionale di Fisica Nucleare, Sezione di Torino (IT), Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (IT), Istituto Nazionale di Fisica Nucleare, Sezione di Trieste (IT), Pusan National University (KR), European Organization for Nuclear Research (CH)
CERN, European Commission, Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Bundesministerium für Bildung und Forschung, Fonds Wetenschappelijk Onderzoek, National Science and Technology Development Agency, Science and Technology Facilities Council, Deutsches Elektronen-Synchrotron
Openalex Percentile: Top 1%
Particle Detector Development and Performance
15.83
DOIOpen Access PDFOpenAlex
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