Preparation and Optical Properties of Thin Films of ZnIn2S4 (I, III) Polytype

The technological regimes of preparation were determined, and ZnIn2S4 thin films were prepared on various orienting and nonorienting substrates – glass, fused silica, vitroceramics, glass covered with SnO2 transparent conductive layers, copper and steel plates, and mica – using the close-spaced vacuum sublimation method. The technological regimes of preparation of thin films of one- and three-packet polytype modifications of ZnIn2S4 (I, III) on glass substrates were found out. The films of the crystallite orientation with (0001) plane parallel to the substrate were obtained. The microstructure of the films was studied for various deposition regimes. The spectra of optical absorption and photoluminescence excitation were analyzed. It was shown that the parameters of the obtained thin films are close to those of ZnIn2S4 single crystals.

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Publication Details

Journal
Elektronnaya Obrabotka Materialov
Published
2024-09-01
DOI
https://doi.org/10.52577/eom.2024.60.4.60
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Preparation and Optical Properties of Thin Films of ZnIn2S4 (I, III) Polytype

Natalia Gașițoi, E. D. Arama, T. D. Shemyakova, Vitalie Pântea et al.
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Elektronnaya Obrabotka Materialov
Chalcogenide Semiconductor Thin Films
article

Preparation and Optical Properties of Thin Films of ZnIn2S4 (I, III) Polytype

Natalia Gașițoi, E. D. Arama, T. D. Shemyakova, Vitalie Pântea, D. I. Ozol
article en

Abstract

The technological regimes of preparation were determined, and ZnIn2S4 thin films were prepared on various orienting and nonorienting substrates – glass, fused silica, vitroceramics, glass covered with SnO2 transparent conductive layers, copper and steel plates, and mica – using the close-spaced vacuum sublimation method. The technological regimes of preparation of thin films of one- and three-packet polytype modifications of ZnIn2S4 (I, III) on glass substrates were found out. The films of the crystallite orientation with (0001) plane parallel to the substrate were obtained. The microstructure of the films was studied for various deposition regimes. The spectra of optical absorption and photoluminescence excitation were analyzed. It was shown that the parameters of the obtained thin films are close to those of ZnIn2S4 single crystals.

Elektronnaya Obrabotka MaterialovVol. 60(4)
Openalex Percentile: Top 87%
Chalcogenide Semiconductor Thin Films
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