Modeling the influence of technological parameters of the magnetron sputtering process using the Caroline D12C system on the proportion of nanocrystallites in the structure of thin silicon films

The experimental dependence of the fraction of nano-sized modification of silicon in thin films obtained by magnetron sputtering on the main technological indicators of the process - specific power on the target, pressure in the working chamber, pulsation frequency of the voltage supplied to the target - has been studied. The data was processed using the method of multiple correlation-regression analysis and a corresponding mathematical model was obtained that describes the experimental dependence. It has been established that the specific power at the target does not significantly affect the fraction of nanosilicon in the film. The voltage frequency on the target has only a positive effect and is therefore limited only by the technical capabilities of the sputtering equipment. The pressure in the working chamber has an optimal value because in the mathematical model for this factor there are both positive and negative coefficients. When analyzing the model by calculation, it was found that the largest proportion of nanosilicon in the film, 75.06%, is achieved at a voltage frequency on the target of 100 Hz and pressure in the working chamber of 1.9 Pa. These data are preliminary due to the limited number of experiments.