Ab-initio prediction of gigantic anomalous Nernst effect in ferromagnetic monolayer transition metal trihalides

The anomalous Hall conductivity of all transition metal trihalides was explored using first-principles calculations. Employing the Fukui-Hatsugai-Suzuki method, we found that ferromagnetic monolayers<i>X</i>Br<sub>3</sub>(<i>X</i>= Pd, Pt) possessed the quantized anomalous Hall conductivity (QAHC) with and without carrier doping. Due to unique QAHC, their transverse thermoelectric properties of<i>X</i>Br<sub>3</sub>(<i>X</i>= Pd, Pt) were investigated. Employing the semi-classical Boltzmann transport theory, the transverse thermoelectric coefficient of each monolayer was analyzed. Anomalous Nernst coefficients (ANCs) of the<i>X</i>Br<sub>3</sub>monolayers were prominent both at and near the Fermi level. Under an assumed relaxation time of 10 fs, the maximum ANCs for the PdBr<sub>3</sub>(PtBr<sub>3</sub>) monolayer reached -54.1 (-23.3)<i>µ</i>V K<sup>-1</sup>atT=300 K upon doping with 1.21 × 10<sup>14</sup>(5.64 × 10<sup>13</sup>) holes cm<sup>-2</sup>. The large ANCs of the<i>X</i>Br<sub>3</sub>monolayers were attributed to the opening of a narrow bandgap generated by spin-orbit coupling both at and near the Fermi level, which led to a large Seebeck-induced charge current and large anomalous Nernst conductivity. These results suggest that ferromagnetic<i>X</i>Br<sub>3</sub>monolayers have significant potential for application in thermoelectric devices.

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Journal
Journal of Physics Condensed Matter
Published
2024-09-20
DOI
https://doi.org/10.1088/1361-648x/ad7d7d
Citations
1
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
0.12

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article

Ab-initio prediction of gigantic anomalous Nernst effect in ferromagnetic monolayer transition metal trihalides

Fumiyuki Ishii, Rifky Syariati, Sasfan Arman Wella, Edi Suprayoga et al.
1 citations
Journal of Physics Condensed Matter
Advanced Thermoelectric Materials and Devices
0.12
article

Ab-initio prediction of gigantic anomalous Nernst effect in ferromagnetic monolayer transition metal trihalides

Fumiyuki Ishii, Rifky Syariati, Sasfan Arman Wella, Edi Suprayoga, Melania Suweni Muntini
article en
1 citations

Abstract

The anomalous Hall conductivity of all transition metal trihalides was explored using first-principles calculations. Employing the Fukui-Hatsugai-Suzuki method, we found that ferromagnetic monolayers<i>X</i>Br<sub>3</sub>(<i>X</i>= Pd, Pt) possessed the quantized anomalous Hall conductivity (QAHC) with and without carrier doping. Due to unique QAHC, their transverse thermoelectric properties of<i>X</i>Br<sub>3</sub>(<i>X</i>= Pd, Pt) were investigated. Employing the semi-classical Boltzmann transport theory, the transverse thermoelectric coefficient of each monolayer was analyzed. Anomalous Nernst coefficients (ANCs) of the<i>X</i>Br<sub>3</sub>monolayers were prominent both at and near the Fermi level. Under an assumed relaxation time of 10 fs, the maximum ANCs for the PdBr<sub>3</sub>(PtBr<sub>3</sub>) monolayer reached -54.1 (-23.3)<i>µ</i>V K<sup>-1</sup>atT=300 K upon doping with 1.21 × 10<sup>14</sup>(5.64 × 10<sup>13</sup>) holes cm<sup>-2</sup>. The large ANCs of the<i>X</i>Br<sub>3</sub>monolayers were attributed to the opening of a narrow bandgap generated by spin-orbit coupling both at and near the Fermi level, which led to a large Seebeck-induced charge current and large anomalous Nernst conductivity. These results suggest that ferromagnetic<i>X</i>Br<sub>3</sub>monolayers have significant potential for application in thermoelectric devices.

Journal of Physics Condensed MatterVol. 37(2)
Kanazawa University (JP), Sepuluh Nopember Institute of Technology (ID), Indonesian Institute of Sciences (ID), Institut Teknologi Indonesia (ID), Advanced Energy Materials (United States) (US), National Research and Innovation Agency (ID)
Kementerian Pendidikan, Kebudayaan, Riset, dan Teknologi, Japan Society for the Promotion of Science, Strategic International Collaborative Research Program
Openalex Percentile: Top 60%
Advanced Thermoelectric Materials and Devices
0.12
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