Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves

van der Waals (vdW) structures host a broad range of physical phenomena. New opportunities arise if different functional layers are remotely modulated or coupled in a device structure. Here we demonstrate the in situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) moirés with on-chip terahertz (THz) waves. Using common dual-gated device structures of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ∼0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control, can serve as on-chip opto-elastic transducers to generate THz waves for coherent control and vibrational entanglement of functional layers in moiré devices.

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Publication Details

Journal
Nano Letters
Published
2024-09-20
DOI
https://doi.org/10.1021/acs.nanolett.4c03129
Citations
8
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
2.70

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article

Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves

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8 citations
Nano Letters
Quantum and electron transport phenomena
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article

Coherent Modulation of Two-Dimensional Moiré States with On-Chip THz Waves

Xiaodong Xu, James Hone, Daniel R. Gamelin, Sebastian F. Maehrlein, Yiliu Li, Takashi Taniguchi, Kenji Watanabe, Cory R. Dean, Eric A. Arsenault, Birui Yang, Heonjoon Park, Xiaoyang Zhu, Xi Wang, Yinjie Guo
article en
8 citations

Abstract

van der Waals (vdW) structures host a broad range of physical phenomena. New opportunities arise if different functional layers are remotely modulated or coupled in a device structure. Here we demonstrate the in situ coherent modulation of moiré excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) moirés with on-chip terahertz (THz) waves. Using common dual-gated device structures of a TMD moiré bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ∼0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moiré excitons or Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control, can serve as on-chip opto-elastic transducers to generate THz waves for coherent control and vibrational entanglement of functional layers in moiré devices.

Nano LettersVol. 24(39)
University of Washington (US), Washington University in St. Louis (US), National Institute for Materials Science (JP), Fritz Haber Institute of the Max Planck Society (DE), Columbia University (US)
Simons Foundation, Japan Society for the Promotion of Science, Basic Energy Sciences
Affordable and clean energy
Openalex Percentile: Top 9%
Quantum and electron transport phenomena
2.70
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