Adaptive Interconnection of High-Performance Micromodular Silicon Transistors Using Electrohydrodynamic Jet Printing

Micromodular n-channel metal-oxide-silicon transistors were fabricated, transferred to a foreign substrate, and adaptively interconnected using high-resolution electrohydrodynamic jet (e-jet) printed metal wires to create depletion-load nMOS inverters. The transferred transistors have effective electron mobilities approaching 500 cm<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}} \cdot $ </tex-math></inline-formula> V<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{-{1}} \cdot $ </tex-math></inline-formula> s−1 and subthreshold swing as low as 82 mV/decade, while the nMOS inverters have gains close to 30. Detailed electrical characterization shows that e-jet printing does not impact transistor performance. Moreover, e-jet printing can accommodate variations in transistor placement, opening the door to systems that can correct manufacturing errors in real-time. This work sets the stage for on-demand microelectronics manufacturing with extreme customizability at the transistor level.