Fully vertical AlN-on-SiC Schottky barrier diodes
Abstract We demonstrated fully vertical Schottky barrier diodes (SBDs) that have a Si-doped AlN drift layer directly grown on an n -type 4H-SiC substrate by metal-organic CVD. The AlN SBD with a Ni anode showed a clear rectifying characteristic at 300–500 K and a rectification ratio of about 10 –2 . We found that the leakage current of the vertical AlN-on-SiC devices is affected by defects in the AlN drift layer and Schottky interface.
Authors
- Masataka Imura (ORCID: https://orcid.org/0000-0002-4236-9549)
- Hironori Okumura (ORCID: https://orcid.org/0000-0002-5464-9169)
- Lorenzo Mainini
- Fuga Miyazawa
Institutions
- University of Tsukuba (JP)
- National Institute for Materials Science (JP)
- Politecnico di Milano (IT)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2024-09-20
- DOI
- https://doi.org/10.35848/1347-4065/ad7dc3
- Citations
- 5
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.55
Funders
- Japan Society for the Promotion of Science