Novel Integrated Double pMOS SOI-LIGBT With Low Loss and High Short-Circuit Capability

An ultralow loss lateral insulated gate bipolar transistor (LIGBT) with high short-circuit capability is proposed and investigated by simulations. The proposed LIGBT features integrated double pMOS at the cathode side of a conventional LIGBT (Con. LIGBT) (named as IDP LIGBT), wherein pMOS1 is the depletion mode and pMOS2 is the enhancement mode. The potential <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {P}}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {N}}$ </tex-math></inline-formula> of cathode P+/N+ regions are self-adaptively modulated by the pMOS2 and pMOS1. In the<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small>-state, the parasitic diode <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${D}1$ </tex-math></inline-formula> (p-well/cathode N+ region) of IDP LIGBT is turned on to enhance the conductivity modulation effect and then achieve a low<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small>-state voltage drop (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula>). During the turning off period, the pMOS2 is turned on before the main gate of LIGBT turning off to extract holes from the p-well quickly and decrease the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {P}}$ </tex-math></inline-formula>, which turns off <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${D}1$ </tex-math></inline-formula> and makes less carriers needed to be extracted. Meanwhile, the pMOS1 channel is self-adaptively narrowed and depleted with the increasing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {AK}}$ </tex-math></inline-formula>, which elevates the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {N}}$ </tex-math></inline-formula> and then reduces the cathode electron injection efficiency. Therefore, the IDP LIGBT achieves an ultrafast switching speed and a low turnoff loss (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {off}}$ </tex-math></inline-formula>). In the short-circuit state with high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\text {AK}}$ </tex-math></inline-formula>, the pMOS1 is self-adaptively pinched off to reduce cathode electron injection efficiency and saturation current, so as to achieve a better short-circuit withstanding time (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula>). Compared with the MOS resistor (MR) LIGBT, the IDP LIGBT decreases the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {off}}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula> by 55%/13% at the same <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {on}}$ </tex-math></inline-formula>/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}_{\text {off}}$ </tex-math></inline-formula> and improves the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${t}_{\text {SC}}$ </tex-math></inline-formula> by 56%.