Vortex Domain Wall Thermal Pinning and Depinning in a Constricted Magnetic Nanowire for Storage Memory Nanodevices

In this study, we investigate the thermal pinning and depinning behaviors of vortex domain walls (VDWs) in constricted magnetic nanowires, with a focus on potential applications in storage memory nanodevices. Using micromagnetic simulations and spin transfer torque, we examine the impacts of device temperature on VDW transformation into a transverse domain wall (TDW), mobility, and thermal strength pinning at the constricted area. We explore how thermal fluctuations influence the stability and mobility of domain walls within stepped nanowires. The thermal structural stability of VDWs and their pinning were investigated considering the effects of the stepped area depth (<i>d</i>) and its length (<i>λ</i>). Our findings indicate that the thermal stability of VDWs in magnetic stepped nanowires increases with decreasing the depth of the stepped area (<i>d</i>) and increasing nanowire thickness (<i>th</i>). For <i>th</i> ≥ 50 nm, the stability is maintained at temperatures ≥ 1200 K. In the stepped area, VDW thermal pinning strength increases with increasing <i>d</i> and decreasing <i>λ</i>. For values of <i>d</i> ≥ 100 nm, VDWs depin from the stepped area at temperatures ≥ 1000 K. Our results reveal that thermal effects significantly influence the pinning strength at constricted sites, impacting the overall performance and reliability of magnetic memory devices. These insights are crucial for optimizing the design and functionality of next-generation nanodevices. The stepped design offers numerous advantages, including simple fabrication using a single electron beam lithography exposure step on the resist. Additionally, adjusting <i>λ</i> and <i>d</i> allows for precise control over the pinning strength by modifying the dimensions of the stepped areas.