TEM investigation of the interface formation during transfer of 3C-SiC(001) layer onto 6H-SiC(0001) wafer

At present, intensive research is underway in the field of vacuum-sublimation growth of 3C-SiC. Transfer of a thin (001)3C-SiC layer onto a 6H-SiC wafer is a promising way to fabricate a 3C-SiC/6H-SiC substrate for growing device-quality homoepitaxial films of low defect density. The article presents the results of the structural characterization of an interface formed during the transfer of a 3C-SiC layer onto a 6H-SiC(0001) wafer, performed with transmission electron microscopy (TEM). A 3C-SiC film with a thickness of about 10 μm, grown by chemical vapor deposition (CVD) on a Si(001) substrate, was utilized in the study. Silicon acted as a bonding material in the transfer process. The morphology and microstructure of the interface between a 6H-SiC substrate and a 3C-SiC (001)-oriented layer are under consideration. TEM investigation reveals an effect of “self”-orientation of the layer with respect to the wafer during the transfer process: an interaction between the molten silicon layer and silicon carbide throughout crystallization results in the generation of defined orientation relationships with respect to substrate axes. An analysis of selected area electron diffraction patterns taken from interfaces showed the relationships to be 3C-SiC{001}‖ 6H-SiC(0001) and 3C-SiC⟨11¯0⟩∼‖ 6H-SiC⟨112¯0⟩.