Investigation of Graphene Single Layer on P-Type and N-Type Silicon Heterojunction Photodetectors

Photodetectors are of great interest in several technological applications thanks to their capability to convert an optical signal into an electrical one through light-matter interactions. In particular, broadband photodetectors based on graphene/silicon heterojunctions could be useful in multiple applications due to their compelling performances. Here, we present a 2D photodiode heterojunction based on a graphene single layer deposited on p-type and n-type Silicon substrates. We report on the electro-optical properties of the device that have been measured in dark and light conditions in a spectral range from 400 nm to 800 nm. The comparison of the device's performance in terms of responsivity and rectification ratio is presented. Raman spectroscopy provides information on the graphene single layer's quality and oxidation. The results showcase the importance of the doping of the silicon substrate to realize an efficient heterojunction that improves the photoresponse, reducing the dark current.