Monolayer Molybdenum Disulfide Transistors with Scaling Dielectric Equivalent Oxide Thickness

Abstract Monolayer molybdenum disulfide (MoS 2 ) demonstrates potential in transistor ultimate scaling, providing a new paradigm for developing next-generation electronic and optoelectronic devices. To enhance device performance, it is necessary to reduce the equivalent oxide thickness (EOT) of the device gate dielectric. In this work, we have successfully reduced the equivalent oxide thickness of the device to 2.3 nm (corresponding to hafnium oxide with a physical thickness of 7 nm), achieving improved device performance, including lowered threshold voltage, enhanced transconductance, and reduced subthreshold swing to 82 mV/dec, demonstrating the superiority of reduced EOT in enhancing device performance.