Optoelectronic properties of chemical vapor deposition grown monolayer MoS2 nanowires

Monolayer (1 L) MoS 2 nanowire possesses large amount of exposed edges, resulting in unique physical properties differing to the large size flake. Preparation of high quality 1 L MoS 2 nanowire using chemical vapor deposition (CVD) is still challenging to the best of our knowledge. Herein, by employing space-confined CVD method using Mo foil as Mo source, 1 L MoS 2 nanowires with width of ∼70 nm can be deposited on the surface of 1 L MoS 2 flake. Tip-enhanced photoluminescence (TEPL) measurements indicate different PL peak position and intensity distribution across the nanowires. Photosensitive Kelvin probe force microscopy (KPFM) measurements further reveal that these nanowires exhibit lower Fermi level than the 1 L MoS 2 flake, resulting in tunable optosensitive charge transfer under different excitation photon energies form 1.58 eV to 2.33 eV. • By employing space-confined CVD method, 1 L MoS 2 nanowires with width ∼70 nm was deposited on the surface of 1 L MoS 2 . • Tip-enhanced photoluminescence measurements indicate different PL energy and intensity distribution across the nanowires. • KPFM measurements reveal tunable optosensitive charge transfer under excitation photon energies of 1.58 , 1.96 and 2.33 eV.