On-Device Pressure-Tunable Moving Schottky Contacts
Contact engineering enhances electronic device performance and functions but often involves costly, inconvenient fabrication and material replacement processes. We develop an <i>in situ</i>, reversible, full-device-scale approach to reconfigurable 2D van der Waals contacts. Ideal p-type Schottky contacts free from surface dangling bonds and Fermi-level pinning are constructed at structurally superlubric graphite-MoS<sub>2</sub> interfaces. Pressure control is introduced, beyond a threshold of which tunneling across the contact can be activated and amplified at higher loads. Record-high figures of merits such an ideality factor nearing 1 and an off-state current of 10<sup>-11</sup> A were reported. The concept of on-device moving contacts is demonstrated through a wearless Schottky generator, operating with an optimized overall efficiency of 50% in converting weak, random external stimuli into electricity. The device combines generator and pressure-sensor functions, achieving a high current density of 31 A/m<sup>2</sup> and withstanding over 120,000 cycles, making it ideal for neuromorphic computing and mechanosensing applications.
Authors
- Xuanyu Huang (ORCID: https://orcid.org/0000-0003-3021-3405)
- Zhiping Xu (ORCID: https://orcid.org/0000-0002-2833-1966)
- Jinbo Bian
- Yuqing He (ORCID: https://orcid.org/0000-0002-6325-5903)
- Quanshui Zheng (ORCID: https://orcid.org/0000-0003-0463-9314)
- Xin Lu (ORCID: https://orcid.org/0000-0001-8304-5906)
- Zhaokuan Yu
Institutions
- Zhejiang University (CN)
- Tsinghua University (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1021/acs.nanolett.4c03084
- Citations
- 13
- Primary Topic
- Molecular Junctions and Nanostructures
- Type
- article
- Field-Weighted Citation Impact
- 2.71
Funders
- National Natural Science Foundation of China