On-Device Pressure-Tunable Moving Schottky Contacts

Contact engineering enhances electronic device performance and functions but often involves costly, inconvenient fabrication and material replacement processes. We develop an <i>in situ</i>, reversible, full-device-scale approach to reconfigurable 2D van der Waals contacts. Ideal p-type Schottky contacts free from surface dangling bonds and Fermi-level pinning are constructed at structurally superlubric graphite-MoS<sub>2</sub> interfaces. Pressure control is introduced, beyond a threshold of which tunneling across the contact can be activated and amplified at higher loads. Record-high figures of merits such an ideality factor nearing 1 and an off-state current of 10<sup>-11</sup> A were reported. The concept of on-device moving contacts is demonstrated through a wearless Schottky generator, operating with an optimized overall efficiency of 50% in converting weak, random external stimuli into electricity. The device combines generator and pressure-sensor functions, achieving a high current density of 31 A/m<sup>2</sup> and withstanding over 120,000 cycles, making it ideal for neuromorphic computing and mechanosensing applications.

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Publication Details

Journal
Nano Letters
Published
2024-09-19
DOI
https://doi.org/10.1021/acs.nanolett.4c03084
Citations
13
Primary Topic
Molecular Junctions and Nanostructures
Type
article
Field-Weighted Citation Impact
2.71

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article

On-Device Pressure-Tunable Moving Schottky Contacts

Xuanyu Huang, Zhiping Xu, Jinbo Bian, Yuqing He et al.
13 citations
Nano Letters
Molecular Junctions and Nanostructures
2.71
article

On-Device Pressure-Tunable Moving Schottky Contacts

Xuanyu Huang, Zhiping Xu, Jinbo Bian, Yuqing He, Quanshui Zheng, Xin Lu, Zhaokuan Yu
article en
13 citations

Abstract

Contact engineering enhances electronic device performance and functions but often involves costly, inconvenient fabrication and material replacement processes. We develop an <i>in situ</i>, reversible, full-device-scale approach to reconfigurable 2D van der Waals contacts. Ideal p-type Schottky contacts free from surface dangling bonds and Fermi-level pinning are constructed at structurally superlubric graphite-MoS<sub>2</sub> interfaces. Pressure control is introduced, beyond a threshold of which tunneling across the contact can be activated and amplified at higher loads. Record-high figures of merits such an ideality factor nearing 1 and an off-state current of 10<sup>-11</sup> A were reported. The concept of on-device moving contacts is demonstrated through a wearless Schottky generator, operating with an optimized overall efficiency of 50% in converting weak, random external stimuli into electricity. The device combines generator and pressure-sensor functions, achieving a high current density of 31 A/m<sup>2</sup> and withstanding over 120,000 cycles, making it ideal for neuromorphic computing and mechanosensing applications.

Nano LettersVol. 24(39)
Zhejiang University (CN), Tsinghua University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 9%
Molecular Junctions and Nanostructures
2.71
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