Navigating Complex Process and Design Challenges in Hybrid Bonding for Advanced Semiconductor Integration: A Comprehensive Analysis

In advanced electronic systems, achieving top-tier interconnect interfaces with fine-pitch integration is of paramount importance. Among interconnect options, hybrid bonding is the choice of technology given its exceptional capacity for accommodating a high input/output (I/O) count, which facilitates high-density memory integration, increased power delivery, and enhanced signal speed. One key technique for ensuring utmost quality in hybrid bonding involves embedding Cu interconnects within the dielectric layer. Equally pivotal is surface planarization, accomplished through chemical mechanical polishing (CMP), which combines a two-step procedure, commencing with copper bulk CMP and culminating in barrier CMP. The latter step is particularly critical, yielding the indispensable surface finish required for a successful hybrid bonding process. Several crucial surface properties significantly influence overall bond yield, including a copper recess (“dishing”) in the vias, erosion and roughness of the dielectric layer, and surface topography changes from high-density to low-density copper vias. To optimize these parameters, a comprehensive understanding of the interconnect layer’s design is essential. Here, we delve into the ramifications of via scaling, ranging from 5 to 1 μm, on dishing and roll-off, and the effects of copper via density variation, spanning from 16% to 13%, on topography. Furthermore, we explore how incorporation of dummy vias impacts the final surface finish, potentially leading to improved bond yield.