Experimental Comparison of Junctionless and Inversion-Mode Nanowire SOI MOSFETs Down to Cryogenics Temperatures
This paper evaluates the electrical characteristics of Inversion-mode (IM) and Junctionless (JNT) SOI nanowire MOSFETs across a temperature spectrum from 300K to 82K. The study examines devices with varying fin widths, utilizing experimental data to analyze crucial electrical metrics, including threshold voltage, inverse subthreshold slope, and carrier mobility throughout the temperature range. The investigation also explores how these parameters are influenced by channel length and fin width.
Authors
- F. E. Bergamaschi (ORCID: https://orcid.org/0000-0002-0927-7407)
- Michelly de Souza (ORCID: https://orcid.org/0000-0001-6472-4807)
- M. Cassé (ORCID: https://orcid.org/0000-0002-4934-2445)
- Sylvain Barraud (ORCID: https://orcid.org/0000-0002-4334-9638)
- Marcelo Antonio Pavanello (ORCID: https://orcid.org/0000-0003-1361-3650)
- Jefferson Almeida Matos
- Olivier Faynot
Institutions
- Centro Universitário FEI (BR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/sbmicro64348.2024.10673773
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00