SF₆/O₂ plasma for ICP/RIE SiC Etching

In this study, we developed seven etching recipes using ICP/RIE plasma for etching the SiC substrate. We utilized scanning electron microscopy (SEM) to examine the angle and structure of the etched SiC wall, as well as to observe any particulates present after etching. Additionally, we employ the profilometry technique to determine the etching rate of each recipe. By conducting both analyses, we were able to study the seven recipes and determine which one has a rounded contact angle, higher etching rate, and lower residue/particulate formation. All recipes employed SF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</inf> gas with a flow of 20 sccm, O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> with 5 sccm, ICP power of 1000 W, and a fixed time of 5 minutes at a temperature of 25°C. These parameters were consistent for all samples, with the variation occurring in the RIE power, working pressure, and DC Bias.