Reversible Memory Operation of Al/TeO₂-ZnO-Au/ TeO₂-ZnO/p-Si MIS Structures

This study investigates the reversible memory operation of Al/TeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-ZnO-Au/ TeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-ZnO/p-Si MIS structures using a TeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-ZnO (TeZnO) matrix in the interface of the p-Si substrate and a thicker TeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-ZnO-Au (TeZnO-Au) composite (~ 170 nm). From C-V electrical characterization, it was shown a charging and de-charging process of the TeZnO/TeZnO-Au interface. During the forward sweep from −2 V to 2V of the C–V acquisition, electrons are injected into the TeZnO/TeZnO-Au interface which promotes a charging process corresponding to an increase of the flat band voltage from ~0.25 V to ~0.50 V. I–V electrical characterization revealed a voltage-dependent memory effect, with distinct hysteresis behaviors observed at cycles with voltage sweep ranging from −1V to 1V. Also, for cycles ranging from −4 V to 4V, the MIS structure with the TeO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>ZnO interlayer exhibited enhanced charge storage and retention capabilities, underscoring its potential as a versatile multibit storage device. Tests with multiple cycles of voltage sweeps demonstrated consistency in the current response, corroborating the relevance and reliability of this memory technology. This memory device emerges as a promising candidate to address the escalating demand for enhanced data storage density and versatility in modern semiconductor memory technologies.