Neutron-induced effects on a commercial GaN High Electron Mobility Transistor
This work explores the effects observed in a commercial-off-the-shelf (COTS) GaN HEMT when exposed to a monoenergetic 14 MeV fast neutron source. The results emphasize the significance of both the device’s technology and the neutron source set up for such conditions.
Authors
- Marco Antônio A. Melo
- N. H. Medina (ORCID: https://orcid.org/0000-0003-0650-6507)
- Renato Giacomini (ORCID: https://orcid.org/0000-0003-1060-2649)
- L. E. Seixas (ORCID: https://orcid.org/0000-0001-5114-650X)
- Vitor A. P. Aguiar (ORCID: https://orcid.org/0000-0001-6199-0800)
- Saulo Finco (ORCID: https://orcid.org/0000-0003-4115-4500)
- R.B.B. Santos (ORCID: https://orcid.org/0000-0003-4395-8078)
- Alexis C. Vilas-Bôas (ORCID: https://orcid.org/0000-0002-5975-5518)
- F.R. Palomo (ORCID: https://orcid.org/0000-0002-1147-0812)
- Saulo G. Alberton (ORCID: https://orcid.org/0000-0002-7390-3660)
- M. Guazzelli (ORCID: https://orcid.org/0000-0001-7110-7241)
- Paulo Roberto Garcia
- Tássio V. Cavalcante
Institutions
- Centro Universitário FEI (BR)
- Centro de Tecnologia da Informação Renato Archer (BR)
- Nuclear Engineering Institute (BR)
- Universidad de Sevilla (ES)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/sbmicro64348.2024.10673863
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.62