Impact of Ionizing Radiation and Temperature on the Performance of pMOSFETs with Different Layouts

This study investigates whether there is a difference in behavior between different layouts of MOSFET transistors, ELT and Rectangular, in terms of their functionalities at different temperatures, reflecting the effects of exposure to ionizing radiation and the bias mode as it was irradiated. The analysis focuses on the subthreshold slope and I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>/I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</inf> ratio, among other parameters, to evaluate device robustness. This study highlights the importance of layout design in enhancing the radiation resilience of semiconductor devices.