Proposal of BESOI MOSFET source sensing region for pH monitoring applications

This work presents a study of the sensing regions of <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">BE</sup>SOI MOSFET for pH sensing using TCAD Sentaurus simulation. A new approach was used to model the electrolyte, based on the literature, as the simulator previously lacked a model for this type of material. The simulation results show an increase in drain current levels for acidic pH values and a decrease for basic pH values. Additionally, the drain voltage demonstrates an influence on the electrolyte charges, which worsens the device sensitivity. Therefore, a new device was proposed, using only the source sensing region to avoid drain influence. This new device shows an improvement in sensitivity and optimizes the obtained results for future experimental analyses.