Transfer of InGaP/GaAs thin-film to unprecedented flexible polymeric bases of PVC:PMMA:DOP modified with EG for solar cell applications

Flexible bases for solar cells, expanding the range of applicability while also lowering manufacturing, freight, and installation expenses.. We are developing and characterizing polymeric blends of PVC:PMMA:DOP modified with exfoliated graphene, intended for use as flexible substrates in III–V photovoltaic applications. The exfoliated graphene was employed to enhance properties such as thermal and mechanical resistance of the polymeric bases. InGaAs/GaAs heterostructures were transferred from the GaAs substrate onto two compositions of the blends. Photoluminescence measurements were conducted before and after the transfer. The results demonstrated that the transfer methodology was successfully implemented. Subsequently, complete solar cell structures will be transferred.

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Published
2024-09-02
DOI
https://doi.org/10.1109/sbmicro64348.2024.10673873
Citations
1
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.21

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article

Transfer of InGaP/GaAs thin-film to unprecedented flexible polymeric bases of PVC:PMMA:DOP modified with EG for solar cell applications

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1 citations
3D IC and TSV technologies
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article

Transfer of InGaP/GaAs thin-film to unprecedented flexible polymeric bases of PVC:PMMA:DOP modified with EG for solar cell applications

Fabiele C. Tavares, R. Jakomin, L. D. Pinto, Alexander Silva, Rogério Valaski, Rudy M. S. Kawabata, P. L. Souza, M. P. Pires, Graciana S. Sousa, Guillermo J. N. Soares
article en
1 citations

Abstract

Flexible bases for solar cells, expanding the range of applicability while also lowering manufacturing, freight, and installation expenses.. We are developing and characterizing polymeric blends of PVC:PMMA:DOP modified with exfoliated graphene, intended for use as flexible substrates in III–V photovoltaic applications. The exfoliated graphene was employed to enhance properties such as thermal and mechanical resistance of the polymeric bases. InGaAs/GaAs heterostructures were transferred from the GaAs substrate onto two compositions of the blends. Photoluminescence measurements were conducted before and after the transfer. The results demonstrated that the transfer methodology was successfully implemented. Subsequently, complete solar cell structures will be transferred.

Universidade Federal do Rio de Janeiro (BR), Instituto Nacional de Metrologia, Qualidade e Tecnologia (BR)
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Conselho Nacional de Desenvolvimento Científico e Tecnológico, Financiadora de Estudos e Projetos
Openalex Percentile: Top 48%
3D IC and TSV technologies
0.21
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