Synthesis and characterization of zinc cobalt sulphide nanofilms for optoelectronic applications

Zinc-cobalt sulphide ( Zn x Co 1 − x S ) thin films were fabricated on glass substrates using the chemical bath deposition (CBD) technique. In this study, the films were grown employing solutions of zinc acetate, cobalt sulphate, and thioacetamide as the respective sources of zinc, cobalt, and sulphur. The synthesized films were investigated for their potential use in optoelectronic device applications. Optical characterization revealed that the films exhibited a direct transition with an energy gap ranging from 3.350 to 3.360 ​eV. As the zinc concentrations were changing, the absorbance of the films were decreasing uniformly along the wavelength spectra. The films exhibit a low extinction coefficient (0.0–0.23) that may be due to the internal reflections within the material as concentrations changes. Variations in the thickness, reflectance and refractive index with zinc concentrations were also discussed. The electrical resistivity was found to decrease from 7.12 × 10 8 to 5.94 × 10 8 (Ω.cm) with zinc concentrations. According to the crystallography spectrum, Zn x Co 1 − x S has a polycrystalline structure with various distinct peaks at different orientations. Scanning electron microscopy shows that surface morphology of Zn x Co 1 − x S films has a well-defined nanoparticles of different shapes and sizes which are uniformly distributed and are significantly transformed as a function of concentrations. The results demonstrate that the chemically deposited thin films can be engineered for a range of optoelectronic applications. • The chemical bath deposition (CBD) method represents a novel approach for the fabrication of cobalt-zinc sulphide thin films. • The chemical bath deposition approach reduces the limitations associated with physical deposition techniques. • The deposition parameters influence the properties of cobalt-zinc sulphide thin films. • Cobalt-zinc sulphide thin films have promising applications in optoelectronics.

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Publication Details

Journal
Chemistry of Inorganic Materials
Published
2024-09-20
DOI
https://doi.org/10.1016/j.cinorg.2024.100068
Citations
4
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.83
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article

Synthesis and characterization of zinc cobalt sulphide nanofilms for optoelectronic applications

Frank Efe, Joseph Onyeka Emegha, Chioma Adaku Ejelonu, Odunayo Tope Ojo et al.
4 citations
Chemistry of Inorganic Materials
Chalcogenide Semiconductor Thin Films
0.83
article

Synthesis and characterization of zinc cobalt sulphide nanofilms for optoelectronic applications

Frank Efe, Joseph Onyeka Emegha, Chioma Adaku Ejelonu, Odunayo Tope Ojo, Kenneth Onyenike, Rita Omamuyovwi Jolayemi
article en
4 citations

Abstract

Zinc-cobalt sulphide ( Zn x Co 1 − x S ) thin films were fabricated on glass substrates using the chemical bath deposition (CBD) technique. In this study, the films were grown employing solutions of zinc acetate, cobalt sulphate, and thioacetamide as the respective sources of zinc, cobalt, and sulphur. The synthesized films were investigated for their potential use in optoelectronic device applications. Optical characterization revealed that the films exhibited a direct transition with an energy gap ranging from 3.350 to 3.360 ​eV. As the zinc concentrations were changing, the absorbance of the films were decreasing uniformly along the wavelength spectra. The films exhibit a low extinction coefficient (0.0–0.23) that may be due to the internal reflections within the material as concentrations changes. Variations in the thickness, reflectance and refractive index with zinc concentrations were also discussed. The electrical resistivity was found to decrease from 7.12 × 10 8 to 5.94 × 10 8 (Ω.cm) with zinc concentrations. According to the crystallography spectrum, Zn x Co 1 − x S has a polycrystalline structure with various distinct peaks at different orientations. Scanning electron microscopy shows that surface morphology of Zn x Co 1 − x S films has a well-defined nanoparticles of different shapes and sizes which are uniformly distributed and are significantly transformed as a function of concentrations. The results demonstrate that the chemically deposited thin films can be engineered for a range of optoelectronic applications. • The chemical bath deposition (CBD) method represents a novel approach for the fabrication of cobalt-zinc sulphide thin films. • The chemical bath deposition approach reduces the limitations associated with physical deposition techniques. • The deposition parameters influence the properties of cobalt-zinc sulphide thin films. • Cobalt-zinc sulphide thin films have promising applications in optoelectronics.

Chemistry of Inorganic MaterialsVol. 4
Covenant University (NG), Novena University (NG), Redeemer's University (NG), University of Benin (NG), Morgan State University (US)
Openalex Percentile: Top 27%
Chalcogenide Semiconductor Thin Films
0.83
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