Characterization of AlGaN/GaN HEMTs with Different Manufacturing Characteristics

This work presents the characterization of high mobility transistors (AlGaN/GaN HEMTs) produced with different techniques in the manufacturing process. The study performs a comparative analysis of the respective HEMTs. Here it is demonstrated that efficient HEMTs can be developed using 2 active implants without the need for specific heat treatment processes to create ohmic contacts or activate the device. The devices thus produced had higher drain current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf>), output conductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</inf>), transconductance (g<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</inf>), field effect mobility (μ<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf>), effective mobility (μ<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">FE</inf>) and low field mobility (μ<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>), in addition to lowest series resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</inf>), threshold voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf>) and subthreshold slope (S). These results indicate that the adopted methodology not only simplifies the manufacturing process but also significantly improves the performance of HEMTs. Keywords — HEMT, Manufacturing process, Gate metal, Series resistance, Ohmic contacts, GaN channel.