Influence of Extraction Methods on the Threshold Voltage Variability Results in SOI Nanosheets
This work presents an experimental evaluation of the influence of the extraction method on the analysis of threshold voltage variability in nanosheet transistors, using seven drain current-based methods. SOI The experimental results of nanosheet transistors with different fin widths and channel lengths show that the choice of the extraction method might change not only the threshold voltage mean value but also its relative deviation.
Authors
- Jaime Calçade Rodrigues (ORCID: https://orcid.org/0000-0002-3731-2206)
- Michelly de Souza (ORCID: https://orcid.org/0000-0001-6472-4807)
- Marcelo Antonio Pavanello (ORCID: https://orcid.org/0000-0003-1361-3650)
- Vinícius Rodrigues Prates
Institutions
- Centro Universitário FEI (BR)
Publication Details
- Published
- 2024-09-02
- DOI
- https://doi.org/10.1109/sbmicro64348.2024.10673848
- Primary Topic
- Integrated Circuits and Semiconductor Failure Analysis
- Type
- article
- Field-Weighted Citation Impact
- 0.00