Influence of Extraction Methods on the Threshold Voltage Variability Results in SOI Nanosheets

This work presents an experimental evaluation of the influence of the extraction method on the analysis of threshold voltage variability in nanosheet transistors, using seven drain current-based methods. SOI The experimental results of nanosheet transistors with different fin widths and channel lengths show that the choice of the extraction method might change not only the threshold voltage mean value but also its relative deviation.

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Published
2024-09-02
DOI
https://doi.org/10.1109/sbmicro64348.2024.10673848
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
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article

Influence of Extraction Methods on the Threshold Voltage Variability Results in SOI Nanosheets

Jaime Calçade Rodrigues, Michelly de Souza, Marcelo Antonio Pavanello, Vinícius Rodrigues Prates
Integrated Circuits and Semiconductor Failure Analysis
article

Influence of Extraction Methods on the Threshold Voltage Variability Results in SOI Nanosheets

Jaime Calçade Rodrigues, Michelly de Souza, Marcelo Antonio Pavanello, Vinícius Rodrigues Prates
article en

Abstract

This work presents an experimental evaluation of the influence of the extraction method on the analysis of threshold voltage variability in nanosheet transistors, using seven drain current-based methods. SOI The experimental results of nanosheet transistors with different fin widths and channel lengths show that the choice of the extraction method might change not only the threshold voltage mean value but also its relative deviation.

Centro Universitário FEI (BR)
Affordable and clean energy
Openalex Percentile: Top 87%
Integrated Circuits and Semiconductor Failure Analysis
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