Waveguide Integration and Packaging of a Multichannel Power Amplifier in a SiGe BiCMOS Technology for mm-Wave Applications

This article introduces the packaging and integration of a multichannel silicon-based power amplifier (PA) operating in the range of 70–74 GHz into a metal waveguide (WG) using a contactless IC-to-WG transition. This contactless transition facilitates the IC-WG connection and incorporates a spatial power combiner and an impedance matching network. This article outlines a comprehensive step-by-step design procedure for the PA and the WG. This procedure encompasses an IC-WG joint-design approach for designing input and output matching networks and spatial power splitter and combiner. Based on simulations and experimental results, this article discusses the need to include packaging design methodology in the overall design process, the effect of packaging technology, and their tolerances on prototype performance. The initial PA-WG prototype results show a measured saturated output power of ~0 dBm and a peak power gain of 11 dB at 72 GHz.