Luminescence and scintillation properties of TlCdCl3:Sb crystals
Abstract An ideal scintillator for X- and gamma-ray detection should have a high light yield and a high effective atomic number ( Z eff ). In this study, we developed undoped TlCdCl 3 crystals and TlCdCl 3 :Sb (Sb: 0.5, 1.0 and 1.5 mol%) crystals with high Z eff (TlCdCl 3 :68.7), as candidate scintillators. The crystals were grown using the self-seeding solidification method, and their photoluminescence (PL) and scintillation properties were investigated. For the undoped TlCdCl 3 crystals, emission peaks were observed at 460 nm and 485 nm in the PL and X-ray-induced radioluminescence (XRL) spectra, respectively. For the TlCdCl 3 :Sb crystals, the PL spectra showed emission peaks at 480, 480 and 500 nm, while the XRL spectra exhibited peaks at approximately 510 nm. The emission bands of the TlCdCl 3 :Sb crystals were shifted to longer wavelengths than those of the undoped TlCdCl 3 crystals. The scintillation decay time constants for the undoped TlCdCl 3 crystals were 51 and 2613 ns, whereas for the TlCdCl 3 :Sb crystals, they were in the range of 65–81 and 4550–7350 ns. These results suggest that the incorporation of Sb 3+ ions induces long components of several thousand nanoseconds. The redshift and appearance of these long components indicate that Sb 3+ ions act as new luminescence centers in the undoped TlCdCl 3 crystal. The scintillation light yield of the TlCdCl 3 :Sb 1.0 mol% crystal was measured at 10,300 photons/MeV. The doping of Sb 3+ ions into the TlCdCl 3 lattice improved the scintillation light yield by up to four times compared to the undoped TlCdCl 3 crystal.
Authors
- Akito Watanabe (ORCID: https://orcid.org/0000-0001-7828-1779)
- Yutaka Fujimoto (ORCID: https://orcid.org/0000-0002-1202-8065)
- Keisuke Asai (ORCID: https://orcid.org/0000-0001-7232-2162)
- Hiroki Kawamoto (ORCID: https://orcid.org/0000-0003-4659-8581)
- Miyu Ishida
Institutions
- Tohoku University (JP)
Publication Details
- Journal
- Journal of Materials Science Materials in Electronics
- Published
- 2024-09-01
- DOI
- https://doi.org/10.1007/s10854-024-13529-w
- Primary Topic
- Radiation Detection and Scintillator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Institute of Advanced Industrial Science and Technology
- Ministry of Education, Culture, Sports, Science and Technology
- Tohoku University
- Amano Institute of Technology
- Kazuchika Okura Memorial Foundation
- Research Foundation for the Electrotechnology of Chubu
- Japan Society for the Promotion of Science