Surface Electronic Structure of Cr Doped Bi2Se3 Single Crystals

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi2−xCrxSe3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi2Se3. These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.

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Publication Details

Journal
Crystals
Published
2024-09-14
DOI
https://doi.org/10.3390/cryst14090812
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Surface Electronic Structure of Cr Doped Bi2Se3 Single Crystals

Genda Gu, Zhongwei Dai, Jerzy T. Sadowski, Xiao Tong et al.
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Topological Materials and Phenomena
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Surface Electronic Structure of Cr Doped Bi2Se3 Single Crystals

Genda Gu, Zhongwei Dai, Jerzy T. Sadowski, Xiao Tong, Turgut Yilmaz, B. Sinković, K. Shimada, Kim Kisslinger, E. Vescovo, Sooyeon Hwang
article en

Abstract

Here, by using angle-resolved photoemission spectroscopy, we showed that Bi2−xCrxSe3 single crystals have a distinctly well-defined band structure with a large bulk band gap and undistorted topological surface states. These spectral features are unlike their thin film forms in which a large nonmagnetic gap with a distorted band structure was reported. We further provide laser-based high resolution photoemission data which reveal a Dirac point gap even in the pristine sample. The gap becomes more pronounced with Cr doping into the bulk of Bi2Se3. These observations show that the Dirac point can be modified by the magnetic impurities as well as the light source.

CrystalsVol. 14(9)
Hiroshima University (JP), University of Connecticut (US), Brookhaven National Laboratory (US)
U.S. Department of Energy, Office of Science, Basic Energy Sciences, Brookhaven National Laboratory
Openalex Percentile: Top 86%
Topological Materials and Phenomena
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