Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

We have investigated the origins of photoluminescence from quantum dot (QD) layers prepared by alternating depositions of sub-monolayers and a few monolayers of size-mismatched species, termed as sub-monolayer (SML) epitaxy, in comparison with their Stranski–Krastanov (SK) QD counterparts. Using measured nanostructure sizes and local In-compositions from local-electrode atom probe tomography as input into self-consistent Schrödinger–Poisson simulations, we compute the 3D confinement energies, probability densities, and photoluminescence (PL) spectra for both InAs/GaAs SML- and SK-QD layers. A comparison of the computed and measured PL spectra suggests one-dimensional electron confinement, with significant 3D hole localization in the SML-QD layers that contribute to their enhanced PL efficiency in comparison to their SK-QD counterparts.

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Publication Details

Journal
Applied Physics Letters
Published
2024-09-16
DOI
https://doi.org/10.1063/5.0219815
Citations
3
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
1.01

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article

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

R. S. Goldman, Thales Borrely, A. A. Quivy, Marcio Daldin Teodoro et al.
3 citations
Applied Physics Letters
Semiconductor Quantum Structures and Devices
1.01
article

Influence of carrier localization on photoluminescence emission from sub-monolayer quantum dot layers

R. S. Goldman, Thales Borrely, A. A. Quivy, Marcio Daldin Teodoro, Ahmad Alzeidan, Y.-C. Yang, G. M. Jacobsen, T.-Y. Huang
article en
3 citations

Abstract

We have investigated the origins of photoluminescence from quantum dot (QD) layers prepared by alternating depositions of sub-monolayers and a few monolayers of size-mismatched species, termed as sub-monolayer (SML) epitaxy, in comparison with their Stranski–Krastanov (SK) QD counterparts. Using measured nanostructure sizes and local In-compositions from local-electrode atom probe tomography as input into self-consistent Schrödinger–Poisson simulations, we compute the 3D confinement energies, probability densities, and photoluminescence (PL) spectra for both InAs/GaAs SML- and SK-QD layers. A comparison of the computed and measured PL spectra suggests one-dimensional electron confinement, with significant 3D hole localization in the SML-QD layers that contribute to their enhanced PL efficiency in comparison to their SK-QD counterparts.

Applied Physics LettersVol. 125(12)
Universidade Federal de São Carlos (BR), Universidade de São Paulo (BR), University of Michigan (US)
National Science Foundation, Fundação de Amparo à Pesquisa do Estado de São Paulo, Coordenação de Aperfeiçoamento de Pessoal de Nível Superior, Horace H. Rackham School of Graduate Studies, University of Michigan, Multidisciplinary University Research Initiative
Openalex Percentile: Top 25%
Semiconductor Quantum Structures and Devices
1.01
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